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Manipulation of electric field induced spin-orbit interaction parameter in double-sided doped InAs and In0.53Ga0.47As quantum well structures

Authors

김경호; Kim Hyung-jun; Park Youn-Ho; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee

Citation

ICAMD, pp.394

Keywords

spin-orbit interaction; quantum well; spin-FET; internal potential asymmetry; Rashba effect; SdH oscillation; gate electric field

URI

https://pubs.kist.re.kr/handle/201004/100548

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KIST Conference Paper > Others

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