High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs

Authors
Shin Sang HoonSONG, JIN-DONGSu youn, KimKim Hyung-junChang, JoonyeonHan, Suk Hee
Citation
AMC 2008
URI
https://pubs.kist.re.kr/handle/201004/101690
Appears in Collections:
KIST Conference Paper > Others
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