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Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)

Authors

SONG, JIN-DONG; Lim Ju-Young; Shin Sang Hoon; Chang, Joonyeon; Choi, Won Jun

Citation

QD 2008

Keywords

InSb; QD; GaAs

URI

https://pubs.kist.re.kr/handle/201004/101960

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KIST Conference Paper > Others

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