DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorHAN, JUN HYUN-
dc.contributor.authorKim Jae Hyun-
dc.contributor.authorMyoung-Woon Moon-
dc.contributor.authorHAN, SEUNG HEE-
dc.contributor.authorJoost J. Vlassak-
dc.date.accessioned2024-01-13T04:31:21Z-
dc.date.available2024-01-13T04:31:21Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/102514-
dc.languageEnglish-
dc.subjectsilicon wafer-
dc.subjectchemical etching-
dc.subjectsurface instability-
dc.subjectKOH-
dc.subjectroughness-
dc.titleSurface instability caused by stress during chemical etching of silicon wafer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationFirst International Coference on Microelectronics and Plasma Techology-
dc.citation.titleFirst International Coference on Microelectronics and Plasma Techology-
dc.citation.conferencePlaceKO-
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