Surface instability caused by stress during chemical etching of silicon wafer

Authors
HAN, JUN HYUNKim Jae HyunMyoung-Woon MoonHAN, SEUNG HEEJoost J. Vlassak
Citation
First International Coference on Microelectronics and Plasma Techology
Keywords
silicon wafer; chemical etching; surface instability; KOH; roughness
URI
https://pubs.kist.re.kr/handle/201004/102514
Appears in Collections:
KIST Conference Paper > Others
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