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dc.contributor.authorPark, In Seon-
dc.contributor.authorLee, Sang In-
dc.contributor.authorWee Young Jin-
dc.contributor.authorJung, Woo Sang-
dc.contributor.authorChoi, Gil Hyeon-
dc.contributor.authorPark, Chang Soo-
dc.contributor.authorPark, Seon Hoo-
dc.contributor.authorAhn, Sung Tae-
dc.contributor.authorLee, Moon Yong-
dc.contributor.authorY.K. Kim-
dc.contributor.authorR. Reynolds-
dc.date.accessioned2024-01-13T05:00:50Z-
dc.date.available2024-01-13T05:00:50Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/102744-
dc.languageEnglish-
dc.subjectAl-Reflow-
dc.subjectECR Plasma Treatment-
dc.subjectContact filling-
dc.subject256Mbit DRAM-
dc.titleA Novel Al-Reflow Process Using Surface Modification by the ECR Plasma Treatment and Its Application to the 256Mbit DRAM-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationElectron Devices Meeting, 1994, Technical Digest., International, pp.109 - 112-
dc.citation.titleElectron Devices Meeting, 1994, Technical Digest., International-
dc.citation.startPage109-
dc.citation.endPage112-
dc.citation.conferencePlaceUS-
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