A Novel Al-Reflow Process Using Surface Modification by the ECR Plasma Treatment and Its Application to the 256Mbit DRAM

Authors
Park, In SeonLee, Sang InWee Young JinJung, Woo SangChoi, Gil HyeonPark, Chang SooPark, Seon HooAhn, Sung TaeLee, Moon YongY.K. KimR. Reynolds
Citation
Electron Devices Meeting, 1994, Technical Digest., International, pp.109 - 112
Keywords
Al-Reflow; ECR Plasma Treatment; Contact filling; 256Mbit DRAM
URI
https://pubs.kist.re.kr/handle/201004/102744
Appears in Collections:
KIST Conference Paper > Others
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