A Novel Al-Reflow Process Using Surface Modification by the ECR Plasma Treatment and Its Application to the 256Mbit DRAM
- Authors
- Park, In Seon; Lee, Sang In; Wee Young Jin; Jung, Woo Sang; Choi, Gil Hyeon; Park, Chang Soo; Park, Seon Hoo; Ahn, Sung Tae; Lee, Moon Yong; Y.K. Kim; R. Reynolds
- Citation
- Electron Devices Meeting, 1994, Technical Digest., International, pp.109 - 112
- Keywords
- Al-Reflow; ECR Plasma Treatment; Contact filling; 256Mbit DRAM
- URI
- https://pubs.kist.re.kr/handle/201004/102744
- Appears in Collections:
- KIST Conference Paper > Others
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