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dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorLim Ju-Young-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.date.accessioned2024-01-13T05:32:15Z-
dc.date.available2024-01-13T05:32:15Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/103111-
dc.title.alternativeGaAs기판상에 나노 구조를 이용하여 격자상수차이를 극복하여 성장된 1um 두께의 고품질 InSb (47,000cm2/Vs)-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제33회 한국진공학회 하계학술대회, v.16, no.2, pp.346-
dc.citation.title제33회 한국진공학회 하계학술대회-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage346-
dc.citation.endPage346-
dc.citation.conferencePlaceKO-
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