GaAs기판상에 나노 구조를 이용하여 격자상수차이를 극복하여 성장된 1um 두께의 고품질 InSb (47,000cm2/Vs)

Authors
SONG, JIN-DONGLim Ju-YoungChoi, Won JunChang, JoonyeonHan, Suk Hee
Issue Date
2007-08
Citation
제33회 한국진공학회 하계학술대회, v.16, no.2, pp.346
URI
https://pubs.kist.re.kr/handle/201004/103111
Appears in Collections:
KIST Conference Paper > Others
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