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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorKim, Seong Il-
dc.contributor.authorYOUM MINSOO-
dc.contributor.authorChang Woo Lee-
dc.contributor.authorMan Young Sung-
dc.date.accessioned2024-01-13T08:33:35Z-
dc.date.available2024-01-13T08:33:35Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/104801-
dc.languageEnglish-
dc.subjectmemory-
dc.subjectphase change-
dc.subjectGe2Sb2Te5-
dc.subjectmetastable FCC-
dc.subjectscaling-
dc.subjectcontact area-
dc.subjectPRAM-
dc.titleEffects of metastable crystallization of Ge2Sb2Te5 thin films and scaled contact dimension on phase change random access memory-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe International Conference on Electrical Engineering 2005 (ICEE2005)-
dc.citation.titleThe International Conference on Electrical Engineering 2005 (ICEE2005)-
dc.citation.conferencePlaceCC-
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