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Effects of metastable crystallization of Ge2Sb2Te5 thin films and scaled contact dimension on phase change random access memory

Authors

Kim, Yong Tae; Kim, Seong Il; YOUM MINSOO; Chang Woo Lee; Man Young Sung

Citation

The International Conference on Electrical Engineering 2005 (ICEE2005)

Keywords

memory; phase change; Ge2Sb2Te5; metastable FCC; scaling; contact area; PRAM

URI

https://pubs.kist.re.kr/handle/201004/104801

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KIST Conference Paper > Others

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