Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si Substrate

Authors
Ho Jung ChangKang Mo SuhPark Ji HoHo Sung ChangSoon Chan HongKim, Yong TaeMakoto Ishida
Citation
International Conference on Electrical Engineering 2004, v.1, pp.1 - 6
URI
https://pubs.kist.re.kr/handle/201004/105576
Appears in Collections:
KIST Conference Paper > Others
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