Full Integration and Cell Characteristics for 64Mb Nonvolatile PRAM

Authors
S.H. LeeY.N. HwangS.Y. LeeK.C. RyooS.J. AhnKoo, Hyun CheolC.W. JeongY.-T. KimG.H. KohG.T. JeongH.S. JeongKinam Kim
Citation
2004 Symposium on VLSI Technology-Digest of Technical Papers, pp.20 - 21
Keywords
full integration; 64Mb; PRAM; high density; cell characteristics
URI
https://pubs.kist.re.kr/handle/201004/105808
Appears in Collections:
KIST Conference Paper > Others
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