DSpace at KISTKIST Conference PaperOthers

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dc.contributor.author정민철-
dc.contributor.author이태경-
dc.contributor.authorPark, Young Ju-
dc.contributor.author고창훈-
dc.contributor.author전승호-
dc.contributor.author함철영-
dc.contributor.author한문섭-
dc.contributor.author박경완-
dc.date.accessioned2024-01-13T11:00:49Z-
dc.date.available2024-01-13T11:00:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105942-
dc.languageEnglish-
dc.subjectnanostructure-
dc.subjectquantum confinement effect-
dc.subjectTEM-
dc.subjectXPS-
dc.subjectsurface modification-
dc.titleNanostructures of SiNx and Si formed by exposure of ionized gas-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 10th Korean Conference on Semiconductors, pp.121 - 122-
dc.citation.titleThe 10th Korean Conference on Semiconductors-
dc.citation.startPage121-
dc.citation.endPage122-
dc.citation.conferencePlaceKO-
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