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Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication

Authors

SONG, JIN-DONG; Young Min Park; Jae Gu Lim; Shin, Jae Cheol; Park, Young Ju; Choi, Won Jun; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il

Citation

The First International Symposium on Future Issues in Nano-optoelectronics, pp.95 - 98

Keywords

Compound semiconductor; Self-assembled quantum dots; Photoluminescence; Strain relaxation layer

URI

https://pubs.kist.re.kr/handle/201004/105998

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KIST Conference Paper > Others

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