Blistering study on hydrogen ion implanted Si surface

Other Titles
양성자 이온 주입에 의한 Si 표면의 blistering 연구
Authors
김형권옥성해KIM JAE HUNKim Sun HoByun Young Tae한상국우형주
Citation
제 10 회 광전자 및 광통신 학술회의 (COOC 2003), pp.469 - 470
Keywords
양성자 이온 주입; SOI; Blister 형성; 열처리
URI
https://pubs.kist.re.kr/handle/201004/106353
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KIST Conference Paper > Others
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