DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorKim Yong Tae-
dc.contributor.authorKim Seong Il-
dc.contributor.author최훈상-
dc.contributor.authorKIM CHUN KEUN-
dc.contributor.author이창우-
dc.date.accessioned2024-01-13T14:01:11Z-
dc.date.available2024-01-13T14:01:11Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107565-
dc.languageEnglish-
dc.subjectSBN-
dc.titleEffects of Bi content on electrical properties of Pt/SrBi//2Nb//2O//9/Si ferroelectric gate structure-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2001 Korea-japan Joint Workshop on Advanced Semiconductor Process and Equipment, pp.9 - 12-
dc.citation.title2001 Korea-japan Joint Workshop on Advanced Semiconductor Process and Equipment-
dc.citation.startPage9-
dc.citation.endPage12-
dc.citation.conferencePlaceKO-
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