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Effects of Bi content on electrical properties of Pt/SrBi//2Nb//2O//9/Si ferroelectric gate structure

Authors

Kim Yong Tae; Kim Seong Il; 최훈상; KIM CHUN KEUN; 이창우

Citation

2001 Korea-japan Joint Workshop on Advanced Semiconductor Process and Equipment, pp.9 - 12

Keywords

SBN

URI

https://pubs.kist.re.kr/handle/201004/107565

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KIST Conference Paper > Others

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