DSpace at KIST: A method of improving dielectric constant and adhesion strength of methyl silsesquioxane by using a NH3 plasma treatment

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DC Field	Value	Language
dc.contributor.author	Kim Yong Tae	-
dc.date.accessioned	2024-01-13T14:33:10Z	-
dc.date.available	2024-01-13T14:33:10Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/107957	-
dc.language	English	-
dc.subject	LOW-K	-
dc.subject	MSQ	-
dc.subject	inter-level dielectirc재료	-
dc.subject	다층배선	-
dc.subject	초고집적소자	-
dc.title	A method of improving dielectric constant and adhesion strength of methyl silsesquioxane by using a NH3 plasma treatment	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proceedings of the 3rd International Symposium on Electronic Materials and Packaging 2001, pp.Session C-2	-
dc.citation.title	Proceedings of the 3rd International Symposium on Electronic Materials and Packaging 2001	-
dc.citation.startPage	Session C-2	-
dc.citation.conferencePlace	KO	-

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