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A method of improving dielectric constant and adhesion strength of methyl silsesquioxane by using a NH3 plasma treatment

Authors

Kim Yong Tae

Citation

Proceedings of the 3rd International Symposium on Electronic Materials and Packaging 2001, pp.Session C-2

Keywords

LOW-K; MSQ; inter-level dielectirc재료; 다층배선; 초고집적소자

URI

https://pubs.kist.re.kr/handle/201004/107957

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KIST Conference Paper > Others

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