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Improvement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper]

Other Titles

YMnO₃/Si 강유전체 게이트를 이용한 FET의 Memory window 특성향상 [Invited Paper]

Authors

Kim Yong Tae; 김익수; PARK YOUNG KYUN

Citation

2000 Asia-Pacific Workshop on Fundamental and Application Advanced Semiconductor Devices, pp.133 - 138

Keywords

YMnO₃

URI

https://pubs.kist.re.kr/handle/201004/108339

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KIST Conference Paper > Others

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