DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorJ. S. Park-
dc.contributor.authorS. Lee-
dc.contributor.authorJu Byeong Kwon-
dc.contributor.authorOH MYUNG HWAN-
dc.contributor.authorJ. Jang-
dc.contributor.authorD. Jeon-
dc.date.accessioned2024-01-13T17:02:13Z-
dc.date.available2024-01-13T17:02:13Z-
dc.date.created2021-09-29-
dc.identifier.issn0099-0966-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109227-
dc.languageEnglish-
dc.subjectFED-
dc.subjectFEA-
dc.subjectMEMS-
dc.titleImprovement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSID 99 Digest, pp.576 - 579-
dc.citation.titleSID 99 Digest-
dc.citation.startPage576-
dc.citation.endPage579-
dc.citation.conferencePlaceUS-
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