Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs

Authors
J. S. ParkS. LeeJu Byeong KwonOH MYUNG HWANJ. JangD. Jeon
Citation
SID 99 Digest, pp.576 - 579
Keywords
FED; FEA; MEMS
ISSN
0099-0966
URI
https://pubs.kist.re.kr/handle/201004/109227
Appears in Collections:
KIST Conference Paper > Others
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