DSpace at KIST: Interconnect failure mechanism maps for different metallization materials and processes

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DC Field	Value	Language
dc.contributor.author	V. K. Andleigh	-
dc.contributor.author	PARK YOUNG JOON	-
dc.contributor.author	C. V. Thompson	-
dc.date.accessioned	2024-01-13T17:32:17Z	-
dc.date.available	2024-01-13T17:32:17Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/109499	-
dc.language	English	-
dc.subject	electromigration	-
dc.subject	reliability	-
dc.title	Interconnect failure mechanism maps for different metallization materials and processes	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Materials Reliability in Microelectronics IX (Mat. Res. Soc. Symp. Proc. v.563), v.563, pp.59 - 64	-
dc.citation.title	Materials Reliability in Microelectronics IX (Mat. Res. Soc. Symp. Proc. v.563)	-
dc.citation.volume	563	-
dc.citation.startPage	59	-
dc.citation.endPage	64	-
dc.citation.conferencePlace	US	-

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