The effect of two step GaN growth on the properties of thick GaN by hydride vapor phase epitaxy

Authors
이정욱백호선이재인유지범Kum Dong Wha
Citation
Proc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998, pp.129 - 132
Keywords
Thick GaN
URI
https://pubs.kist.re.kr/handle/201004/109919
Appears in Collections:
KIST Conference Paper > Others
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