Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Authors
Kim Seong IlH.H. TanC. JagadishL.V. DaoM. Gal
Citation
Conference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98), pp.145 - 146
Keywords
delta-doped; quantum wire; MOCVD
URI
https://pubs.kist.re.kr/handle/201004/110280
Appears in Collections:
KIST Conference Paper > Others
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