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Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Authors

Kim Seong Il; H.H. Tan; C. Jagadish; L.V. Dao; M. Gal

Citation

Conference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98), pp.145 - 146

Keywords

delta-doped; quantum wire; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/110280

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KIST Conference Paper > Others

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