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dc.contributor.author김주성-
dc.contributor.authorByun Dongjin-
dc.contributor.authorKIM JIN SANG-
dc.contributor.authorKum Dong Wha-
dc.date.accessioned2024-01-13T19:02:23Z-
dc.date.available2024-01-13T19:02:23Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110305-
dc.languageEnglish-
dc.subjectMOCVD-
dc.titleMOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationAbst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA, pp.104-
dc.citation.titleAbst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA-
dc.citation.startPage104-
dc.citation.endPage104-
dc.citation.conferencePlaceKO-
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