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MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method

Authors

김주성; Byun Dongjin; KIM JIN SANG; Kum Dong Wha

Citation

Abst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA, pp.104

Keywords

MOCVD

URI

https://pubs.kist.re.kr/handle/201004/110305

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KIST Conference Paper > Others

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