Role of restrained vertical growth in realizing one-step maskless selective epitaxy on patterned GaAs substrate

Authors
SON CHANG-SIKPARK YOUNG KYUNKim Seong IlKIM EUN KYU최인훈
Citation
한국물리학회 회보 = Bulletin of the Korean Physical Society, v.16, no.2, pp.476
Keywords
one-step maskless selective epitaxy; selective epitaxy; GaAs; metalorganic chemical vapor deposition
URI
https://pubs.kist.re.kr/handle/201004/110391
Appears in Collections:
KIST Conference Paper > Others
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