The effect of low temperature GaN-buffer layer on the growth of thick GaN using HVPE

Other Titles
Hydride vapor phase epitaxy를 이용한 저온 GaN 완충층이 후막 GaN 성장특성에 미치는 영향
Authors
이정욱백호선유지범Kim Gyeung HoKum Dong Wha
Citation
대한금속학회회보 = Bull. Kor. Inst. Met. & Mater., v.11, no.5, pp.499 - 504
Keywords
Hydride Vapor Phase Epitaxy(HVPE); GaN-buffer; thick GaN film; cross sectional TEM
ISSN
1225-1550
URI
https://pubs.kist.re.kr/handle/201004/110411
Appears in Collections:
KIST Conference Paper > Others
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