Temperature characteristics of InGaAs/InGaAsP MQW laser diode grown by chemical beam epitaxy

Other Titles
CBE법으로 성장한 InGaAs/InGaAsP MQW 레이저 다이오드의 온도 특성
Authors
엄창섭KPARK KYUNG HYUNByun Young TaeHan Il KiWoo Deok HaKim Sun HoLee Jung IlPARK JEONG HO
Citation
제14회 광학 및 양자전자 학술발표회, pp.67
Keywords
CBE; 반도체 레이저 다이오드
URI
https://pubs.kist.re.kr/handle/201004/110667
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KIST Conference Paper > Others
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