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Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates

Authors

Cho Shinho; SON CHANG-SIK; 이달진; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki

Citation

Proc. 4th Korean conf. semiconductors., pp.65 - 66

Keywords

temperature dependence; photoluminescence peak; carbon-doped GaAs; MOCVD; high miller index

URI

https://pubs.kist.re.kr/handle/201004/110929

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KIST Conference Paper > Others

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