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Reactive ion (N₂+) beam treatment of sapphire for GaN deposition

Authors

Kum Dong Wha; Byun Dongjin; 정재식; KIM BYUNG HO; KOH SEOK KEUN; CHOI WON-KOOK; Park Dal keun

Citation

The second International Conference on Nitride Semiconductors -ICNS'97-, P2-39, October 27-31, 1997,, pp.314 - ?

Keywords

reactive ion beam

URI

https://pubs.kist.re.kr/handle/201004/111190

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KIST Conference Paper > Others

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