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Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4.

Authors

SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈

Citation

Bulletin of the Korean physical society, v.v. 14, no.no. 1, pp.239 - ?

Keywords

carbon

URI

https://pubs.kist.re.kr/handle/201004/111645

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KIST Conference Paper > Others

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