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dc.contributor.authorJEON BUP JU-
dc.contributor.author허정수-
dc.contributor.author윤용수-
dc.contributor.author정일현-
dc.contributor.authorOh In Hwan-
dc.contributor.authorLim Tae Hoon-
dc.date.accessioned2024-01-13T21:32:42Z-
dc.date.available2024-01-13T21:32:42Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111664-
dc.languageEnglish-
dc.titleCharacteristics of silicon oxide films prepared by chemical vapor deposition and dry oxidation method using ECR plasma sources.-
dc.title.alternativeECR 플라즈마를 이용한 화학증착법 및 건식 산화법에 의해 제조된 실리콘 산화막의 특성-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationTheories and applications of chem. res., v.2, no.1, pp.933 - ?-
dc.citation.titleTheories and applications of chem. res.-
dc.citation.volume2-
dc.citation.number1-
dc.citation.startPage933-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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