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Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.

Authors

SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki

Citation

Proceedings of the 3rd Korean conference on semiconductors, pp.77 - 78

Keywords

carbon

URI

https://pubs.kist.re.kr/handle/201004/111703

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KIST Conference Paper > Others

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