Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE).

Authors
SON CHANG-SIK전인상한철구이정훈JIN HYOUN CHERKIM MOO SUNGMin Suk-Ki
Citation
Bulletin of the Korean physical society, v.v. 13, no.no. 1, pp.128 - ?
Keywords
InGaAs
URI
https://pubs.kist.re.kr/handle/201004/111943
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KIST Conference Paper > Others
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