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Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE).

Authors

SON CHANG-SIK; 전인상; 한철구; 이정훈; JIN HYOUN CHER; KIM MOO SUNG; Min Suk-Ki

Citation

Bulletin of the Korean physical society, v.v. 13, no.no. 1, pp.128 - ?

Keywords

InGaAs

URI

https://pubs.kist.re.kr/handle/201004/111943

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KIST Conference Paper > Others

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