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Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer.

Authors

KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim

Citation

Ist Korea-Chinese semiconductor conference, Beijing, China, pp.?

Keywords

quantum well disordering

URI

https://pubs.kist.re.kr/handle/201004/112038

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KIST Conference Paper > Others

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