The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.

Authors
Kim Seong IlMin Suk-KiKIM YOUNKIM MOO SUNG
Citation
The 1st Korean semiconductor conference, pp.?
Keywords
MOCVD; GaAs; AlGaAs; PL
URI
https://pubs.kist.re.kr/handle/201004/112140
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE