Characteristics of C-doped GaAs and critical layer thickness.

Authors
Kim Seong IlEOM KYUNG SOOKKIM YOUNKIM MOO SUNGMin Suk-Ki곽명현마동성
Citation
International symposium on the physics of semiconductor and its applications, pp.364 - ?
Keywords
MOCVD; GaAs; carbon; critical layer
URI
https://pubs.kist.re.kr/handle/201004/112655
Appears in Collections:
KIST Conference Paper > Others
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