Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Authors
Eom, JaeunLee, In HakKee, Jung YunCho, MinhyunSeo, JeongdaeSuh, HoyoungChoi, Hyung-JinSim, YuminChen, ShuzhangChang, Hye JungBaek, Seung-HyubPetrovic, CedomirRyu, HyejinJang, ChaunKim, Young DuckYang, Chan-HoSeong, Maeng-JeLee, Jin HongPark, Se YoungChoi, Jun Woo
Issue Date
2023-09
Publisher
Nature Publishing Group
Citation
Nature Communications, v.14, no.1
Abstract
We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3 . It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
Keywords
FERROELECTRICITY; FERROMAGNETISM; PROSPECTS; ENERGY
ISSN
2041-1723
URI
https://pubs.kist.re.kr/handle/201004/113296
DOI
10.1038/s41467-023-41382-8
Appears in Collections:
KIST Article > 2023
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