DSpace at KISTKIST Conference Paper2018

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dc.contributor.authorKim, SangHyeon-
dc.contributor.authorKim, Seong Kwang-
dc.contributor.authorShin, SangHoon-
dc.contributor.authorHan, Jae-Hoom-
dc.contributor.authorGrum, Dae-Myeong-
dc.contributor.authorKim, Hyung-jun-
dc.contributor.authorLee, Subin-
dc.contributor.authorKim, Han Sung-
dc.contributor.authorJu, Gunwu-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorAlam, Muhammad A.-
dc.contributor.authorShim, Jae-Phil-
dc.date.accessioned2024-01-19T10:38:07Z-
dc.date.available2024-01-19T10:38:07Z-
dc.date.created2022-02-28-
dc.date.issued2018-10-
dc.identifier.issn2573-5926-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114340-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleHeat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)-
dc.citation.titleIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceBurlingame, CA-
dc.citation.conferenceDate2018-10-15-
dc.relation.isPartOf2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)-
dc.identifier.wosid000462960700052-
dc.identifier.scopusid2-s2.0-85063152495-
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KIST Conference Paper > 2018
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