DSpace at KISTKIST Conference Paper2018

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dc.contributor.authorHan, Jae-Hoon-
dc.contributor.authorTakenaka, Mitsuru-
dc.contributor.authorTakagi, Shinichi-
dc.date.accessioned2024-01-19T10:38:35Z-
dc.date.available2024-01-19T10:38:35Z-
dc.date.created2022-02-28-
dc.date.issued2018-07-
dc.identifier.issn2166-8884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114351-
dc.description.abstractMaterial engineering for semiconductor-insulator-semiconductor (SIS) structures is important for a high-performance optical modulator. We have suggested an InGaAsP/Si hybrid SIS structure using direct wafer bonding with high-k dielectrics for using high electron effect in InGaAsP.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleSemiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation23rd Opto-Electronics and Communications Conference (OECC)-
dc.citation.title23rd Opto-Electronics and Communications Conference (OECC)-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceJeju, SOUTH KOREA-
dc.citation.conferenceDate2018-07-02-
dc.relation.isPartOf23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018)-
dc.identifier.wosid000477695500178-
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KIST Conference Paper > 2018
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