Epitaxial growth and optical band gap variation of ultrathin ZnTe films

Authors
Kim, Min JayLee, Kyeong JunKim, Hyun DonKim, Hyuk JinChoi, Byoung KiLee, In HakKhim, Yeong GwangHeo, Jin EunChang, Seo HyoungChoi, EunjipChang, Young Jun
Issue Date
2022-04
Publisher
Elsevier BV
Citation
Materials Letters, v.313
Abstract
Zinc telluride (ZnTe) has attracted interests for its semiconducting, optoelectronic, and electrical switching properties. However, the growth mechanism of ultrathin epitaxial films is not well established. Here we present a systematic study of the growth ultrathin ZnTe films on GaAs (001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction and synchrotron based high-resolution X-ray diffraction showed that both surface atomic ordering and single crystalline phase aligned to the substrate orientation with small variation of caxis lattice in the ultrathin films. While the deviation of chemical compositions depended on the growth conditions, information on the variation of the band gap and in-gap states was obtained through spectroscopic ellipsometry analysis. Our study showed that single crystal ZnTe films can serve as a model system in the development of Ovonic threshold switching devices for cross-point device applications.
Keywords
ZnTe; Molecular beam epitaxy; Epitaxial film; Optical band gap; GaAs substrate
ISSN
0167-577X
URI
https://pubs.kist.re.kr/handle/201004/115473
DOI
10.1016/j.matlet.2022.131725
Appears in Collections:
KIST Article > 2022
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