Facile Achievement of Complementary Resistive Switching in Block Copolymer Micelle-Based Resistive Memories
- Authors
- Choi, Han-Hyeong; Kim, Hyun Jin; Oh, Jinwoo; Kim, Minsung; Kim, Youngjin; Jho, Jae Young; Lee, Keun Hyung; Son, Jeong Gon; Park, Jong Hyuk
- Issue Date
- 2022-04
- Publisher
- John Wiley & Sons Ltd.
- Citation
- Macromolecular Rapid Communications, v.43, no.7
- Abstract
- Interest in resistive random access memory (RRAM) has grown rapidly in recent years for realizing ultrahigh density data storage devices. However, sneak currents in these devices can result in misreading of the data, thus limiting the applicability of RRAM. Complementary resistive switching (CRS) memory consisting of two antiserial RRAMs can considerably reduce sneak currents; however, complicated device architectures and manufacturing processes still remain as challenges. Herein, an effective and simple approach for fabricating CRS memory devices using self-assembled block copolymer micelles is reported. Cu ions are selectively placed in the core of polystyrene-block-poly(2-vinylpyridine) spherical micelles, and a hexagonally packed micelle monolayer is prepared through spin-coating. The micelle monolayer can be a symmetrical resistive switching layer, because the micelles and Cu act as dielectric and active metals in memory devices, respectively. The locally enhanced electric field and Joule heating achieved by the structured Cu atoms inside the micelles promote metal ionization and ion migration in a controlled manner, thus allowing for position selectivity during resistive switching. The micelle-based memory device exhibits stable and reliable CRS behavior, with a nonoverlapping and narrow distribution of threshold voltages. Therefore, this approach is promising for fabricating CRS memory devices for high-performance and ultrahigh-density RRAM applications.
- Keywords
- CHARGE-LIMITED CURRENTS; NANOPARTICLES; MECHANISMS; DEVICES; block copolymer micelles; complementary resistive switching; reliability; reproducibility; resistive random access memory
- ISSN
- 1022-1336
- URI
- https://pubs.kist.re.kr/handle/201004/115478
- DOI
- 10.1002/marc.202100686
- Appears in Collections:
- KIST Article > 2022
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.