Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, K. H. | - |
dc.contributor.author | Kim, T. G. | - |
dc.contributor.author | Lee, S. | - |
dc.contributor.author | Jhon, Y. M. | - |
dc.contributor.author | Kim, S. H. | - |
dc.contributor.author | Byun, Y. T. | - |
dc.date.accessioned | 2024-01-19T12:38:05Z | - |
dc.date.available | 2024-01-19T12:38:05Z | - |
dc.date.created | 2022-03-07 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/115719 | - |
dc.description.abstract | In this paper, we investigated a novel method of selectively assembling single-walled carbon nonotubes (SWCNTs) on a silicon (Si) substrate. These SWCNT arrays were fabricated by using only a photolithographic process. Using this technique, SWCNTs could be absorbed on the Si substrate surface without complicated chemical steps. As a result, we successfully fabricated SWCNT-based multi-channel patterns. The unmanageable SWCNTs could be easily obsorbed on the SiO2 surface. This is to advance one step further from the conventional self-assembled process using octadecyltrichorosilane (OTS). This technique will provide a useful basis for the implementation of nanostructure-based field emission transistor (FET) devices. This new process can be used to fabricate SWCNT channels of FET devices. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Selectively Self-Assembled Single-Salled Carbon Nanotubes Using Only Photolithography Without Additional Chemical Process | - |
dc.type | Conference | - |
dc.identifier.doi | 10.1063/1.3666631 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | 30th International Conference on the Physics of Semiconductors (ICPS-30), v.1399 | - |
dc.citation.title | 30th International Conference on the Physics of Semiconductors (ICPS-30) | - |
dc.citation.volume | 1399 | - |
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | Seoul, SOUTH KOREA | - |
dc.citation.conferenceDate | 2010-07-25 | - |
dc.relation.isPartOf | PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | - |
dc.identifier.wosid | 000301053000392 | - |
dc.identifier.scopusid | 2-s2.0-84862819233 | - |
dc.type.docType | Proceedings Paper | - |
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