Systematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory

Authors
Gwon, Oh HunKim, Jong YunKim, Han SeulKang, Seok-JuByun, Hye RyungPark, MinLee, Dong SuKim, Yoon-jeongAhn, SeokhoonKim, JaekyungCho, Sang-JoonYu, Young-Jun
Issue Date
2021-10
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED FUNCTIONAL MATERIALS, v.31, no.43
Abstract
Van der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non-volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The non-volatile memory behavior of 2D materials has mainly been studied for single-bit operation, and there is growing interest in expanding to multi-bit operation to enhance the storage capacities of memory devices. However, the conditions or rules for generating the desired number of bits in 2D-based multi-bit memory remain to be identified. In this study, multiple bits are successfully created on non-volatile memory based on vdW heterostructure floating-gate memory (FGM) by systematically tuning the dimensions of the 2D materials. In particular, a fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered-material-based vdW FGMs.
Keywords
DER-WAALS HETEROSTRUCTURES; NONVOLATILE MEMORY; FLASH; TRANSISTORS; MOBILITY; BUBBLES; DER-WAALS HETEROSTRUCTURES; NONVOLATILE MEMORY; FLASH; TRANSISTORS; MOBILITY; BUBBLES; 2D materials; floating gate memory; hBN thickness; multi-bit generation map; multi-bit memory
ISSN
1616-301X
URI
https://pubs.kist.re.kr/handle/201004/116365
DOI
10.1002/adfm.202105472
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KIST Article > 2021
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