Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator

Authors
Roh, J.W.Yang, J.S.Ok, S.H.Woo, D.H.Lee, S.Jhon, Y.M.Mizumoto, T.Lee, W.Y.Byun, Y.T.
Issue Date
2006-09
Publisher
Trans Tech Publications Ltd
Citation
IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, pp.475 - 478
Abstract
A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.
ISSN
1012-0394
URI
https://pubs.kist.re.kr/handle/201004/116721
DOI
10.4028/3-908451-31-0.475
Appears in Collections:
KIST Conference Paper > 2006
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE