Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Authors
Kang, MinsooChai, Hyun-JunJeong, Han BeomPark, CheolminJung, In-YoungPark, EunpyoCicek, Mert MiracLee, InjunBae, Byeong-SooDurgun, EnginKwak, Joon YoungSong, SeungwooChoi, Sung-YoolJeong, Hu YoungKang, Kibum
Issue Date
2021-05-25
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.15, no.5, pp.8715 - 8723
Abstract
Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (similar to 300 degrees C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm(2)/(V.s) and photoresponsivity of 45134 A/W.
Keywords
MOBILITY; EPITAXY; FILMS; WSE2; MOBILITY; EPITAXY; FILMS; WSE2; cracking metal-organic chemical vapor deposition; bismuth-oxy-selenide; low-growth temperature; epitaxial growth; field-effect transistor; photodetector
ISSN
1936-0851
URI
https://pubs.kist.re.kr/handle/201004/116976
DOI
10.1021/acsnano.1c00811
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KIST Article > 2021
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