DSpace at KISTKIST Conference Paper2001

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dc.contributor.authorPark, YJ-
dc.contributor.authorCho, YS-
dc.contributor.authorKoh, EK-
dc.contributor.authorKim, EK-
dc.contributor.authorKim, GG-
dc.contributor.authorByun, DJ-
dc.contributor.authorMin, SK-
dc.date.accessioned2024-01-19T16:08:56Z-
dc.date.available2024-01-19T16:08:56Z-
dc.date.created2022-03-07-
dc.date.issued2001-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/117915-
dc.languageEnglish-
dc.publisherJAPAN SOCIETY APPLIED PHYSICS-
dc.titleImplantation of N-ion on sapphire substrate for GaN epilayer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Microprocesses and Nanotechnology Conference, pp.222 - 223-
dc.citation.titleInternational Microprocesses and Nanotechnology Conference-
dc.citation.startPage222-
dc.citation.endPage223-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceKUNIBIKI MESSE, JAPAN-
dc.citation.conferenceDate2001-10-31-
dc.relation.isPartOfMICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS-
dc.identifier.wosid000175849600111-
dc.identifier.scopusid2-s2.0-84960437438-
dc.type.docTypeProceedings Paper-
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KIST Conference Paper > 2001
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